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Kaszyca K.♦, Marcin C.♦, Bucholc B., Błyskun P.♦, Nisar F., Rojek J., Zybała R.♦, Using the Spark Plasma Sintering System for Fabrication of Advanced Semiconductor Materials,
Materials, ISSN: 1996-1944, DOI: 10.3390/ma17061422, Vol.17, No.1422, pp.1-15, 2024 Streszczenie:
The interest in the Spark Plasma Sintering (SPS) technique has continuously increased over the last few years. This article shows the possibility of the development of an SPS device used for material processing and synthesis in both scientific and industrial applications and aims to present manufacturing methods and the versatility of an SPS device, presenting examples of processing Arc-Melted- (half-Heusler, cobalt triantimonide) and Self-propagating High-temperature Synthesis (SHS)-synthesized semiconductor (bismuth telluride) materials. The SPS system functionality development is presented, the purpose of which was to broaden the knowledge of the nature of SPS processes. This approach enabled the precise design of material sintering processes and also contributed to increasing the repeatability and accuracy of sintering conditions. Słowa kluczowe:
spark plasma sintering, arc melting, semiconductor materials, half-Heusler, bismuth telluride, cobalt triantimonide, SHS, SPS Afiliacje autorów:
| Kaszyca K. | - | Lukasiewicz Institute of Microelectronics and Photonics (PL) | | Marcin C. | - | inna afiliacja | | Bucholc B. | - | IPPT PAN | | Błyskun P. | - | inna afiliacja | | Nisar F. | - | IPPT PAN | | Rojek J. | - | IPPT PAN | | Zybała R. | - | Politechnika Warszawska (PL) |
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