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Dłużewski P., Belkadi A., Chen J.♦, Ruterana P.♦, Nouet G.♦, FE simulation of InGaN QD formation at the edge of threading dislocation in GaN,
IWN 2006, International Workshop on Nitride Semiconductors, 2006-10-22/0-27, Kyoto (JP), DOI: 10.1002/pssc.200674870, Vol.7, pp.2403-2406, 2007 Streszczenie:
The stress induced diffusion process of In-Ga segregation in InxGa1–xN layer deposited on GaN is simulated step by step by using a 3D nonlinear FE method. From the thermodynamical point of view this process is governed by the driving force induced by the gradient of residual stresses operating in an anisotropic nonlinear elastic structure. The source of stresses we consider is the set of threading dislocations examined in the plane view HRTEM investigation of GaN layer deposited on sapphire. Afiliacje autorów:
| Dłużewski P. | - | IPPT PAN | | Belkadi A. | - | IPPT PAN | | Chen J. | - | Laboratoiré de Recherché sur les Proprietes des Materiaux Nouveaux (FR) | | Ruterana P. | - | CNRS (FR) | | Nouet G. | - | CNRS (FR) |
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