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Alexandre L.♦, Jurczak G., Alfonso C.♦, Saikly W.♦, Grosjean C.♦, Charai A.♦, Thibault J.♦, Microscopy of semiconducting materials CBED and FE study of thin foil relaxation in cross-section samples of Si/SiGe and Si/SiGe/Si heterostructures,
Proceedings in Physics, ISSN: 0930-8989, DOI: 10.1007/978-1-4020-8615-1_90, Vol.120, pp.415-418, 2008 Słowa kluczowe:
Convergent-beam electron diffraction, elastic strain relaxation, finite element modelling Afiliacje autorów:
| Alexandre L. | - | CNRS (FR) | | Jurczak G. | - | IPPT PAN | | Alfonso C. | - | CNRS (FR) | | Saikly W. | - | Université Paul Cézanne (FR) | | Grosjean C. | - | ST Microelectronics (RCCAL) (FR) | | Charai A. | - | CNRS (FR) | | Thibault J. | - | Université Paul Cézanne (FR) |
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