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Teisseyre H.♦, Boćkowski M.♦, Young T.D., Grzanka Sz.♦, Zhydachevskii Y.♦, Grzegory I.♦, Kozanecki A.♦, A monolithic white-light LED based on GaN doped with Be,
Advances in Science and Technology, ISSN: 1662-0356, DOI: 10.4028/www.scientific.net/AST.93.264, Vol.93, pp.264-269, 2014 Streszczenie:
In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission. Słowa kluczowe:
Beryllium, Gallium Nitride (GaN), Light Emitting Diode (LED), Optical Converters Afiliacje autorów:
| Teisseyre H. | - | Institute of Physics, Polish Academy of Sciences (PL) | | Boćkowski M. | - | Institute of High Pressure Physics, Polish Academy of Sciences (PL) | | Young T.D. | - | IPPT PAN | | Grzanka Sz. | - | inna afiliacja | | Zhydachevskii Y. | - | Institute of Physics, Polish Academy of Sciences (PL) | | Grzegory I. | - | Institute of High Pressure Physics, Polish Academy of Sciences (PL) | | Kozanecki A. | - | inna afiliacja |
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