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Maciejewski G., Kret S.♦, Ruterana P.♦, Piezoelectric field around threading dislocation in GaN determined on the basis of high-resolution transmission electron microscopy image,
JOURNAL OF MICROSCOPY, ISSN: 0022-2720, Vol.223, pp.212-215, 2006 | |
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Jurczak G., Maciejewski G., Kret S.♦, Dłużewski P., Ruterana P.♦, Modelling of indium rich clusters in MOCVD InxGa1−xN/GaN multilayers,
JOURNAL OF ALLOYS AND COMPOUNDS, ISSN: 0925-8388, DOI: 10.1016/j.jallcom.2004.05.038, Vol.382, No.1-2, pp.10-16, 2004Streszczenie: Chemical composition in a ternary alloy is examined using a quantitative high resolution transmission electron microscopy, finite element modelling of the thin foil relaxation phenomena and microscopy image simulation. The measurement of local lattice distortion on transmission electron microscopy images is a powerful tool for chemical composition determination. However, for the correct interpretation of the results, one needs to take into account the inhomogeneous relaxation of the sample and the strain averaging across the sample. The 3D finite element modelling of such phenomena have been performed as a function of chemical composition and geometry of an indium rich cluster in a MOCVD InxGa1−xN/GaN quantum well. Lattice distortion field measured on: experimental transmission electron microscopy image and simulated one, obtained on the basis of finite element simulation, are compared. This procedure allows an accurate determination of chemical composition in such heterostructures. Słowa kluczowe: Indium clusters, Vapour deposition, Transmissionelectron microscopy, Elasticity, Finite element method, Lattice distortion, Image simulation Afiliacje autorów:
Jurczak G. | - | IPPT PAN | Maciejewski G. | - | IPPT PAN | Kret S. | - | Institute of Physics, Polish Academy of Sciences (PL) | Dłużewski P. | - | IPPT PAN | Ruterana P. | - | CNRS (FR) |
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Ruterana P.♦, Singh P.♦, Kret S.♦, Jurczak G., Maciejewski G., Dłużewski P., Cho H.K.♦, Choi R.J.♦, Lee H.J.♦, Suh E.K.♦, Quantitative evolution of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures,
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, ISSN: 0370-1972, Vol.241, No.12, pp.2643-2648, 2004Streszczenie: The cover picture of this issue depicts indium composition fluctuations in InGaN/GaN multi quantum wells. The coded color strain distribution (left) was derived from finite element method calculations of the strain relaxation process and high‐resolution transmission electron microscopy (HRTEM) image simulations, superimposed on the HRTEM image of the quantum wells. The possible corresponding shape and εxx strain profiles in the indium rich clusters (right) hint at a concentration close to pure InN in their core. The paper by Pierre Ruterana et al. [1] was presented at the 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED‐2004), held in Gyeongju, Korea, 15–19 March 2004. Słowa kluczowe: HRTEM, quantum well, composition fluctuation, strain distribution Afiliacje autorów:
Ruterana P. | - | CNRS (FR) | Singh P. | - | CNRS (FR) | Kret S. | - | Institute of Physics, Polish Academy of Sciences (PL) | Jurczak G. | - | IPPT PAN | Maciejewski G. | - | IPPT PAN | Dłużewski P. | - | IPPT PAN | Cho H.K. | - | Dong-A University (KR) | Choi R.J. | - | Chonbuk National University (KR) | Lee H.J. | - | Chonbuk National University (KR) | Suh E.K. | - | Chonbuk National University (KR) |
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Dłużewski P., Jurczak G., Maciejewski G., Kret S.♦, Ruterana P.♦, Nouet G.♦, Finite Element Simulation of Residual Stresses in Epitaxial Layers,
Materials Science Forum (MSF), ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.404-407.141, Vol.404-407, pp.141-146, 2002Streszczenie: A nonlinear finite element approach presented here is based on the constitutive equations for anisotropic hyperelatic materials. By digital image processing the elastic incompatibilities (lattice mismatch) are extracted from the HRTEM image of GaN epilayer. Such obtained tensorial field of dislocation distribution is used next as the input data to the FE code. This approach is developed to study the stress distribution associated with lattice defects in highly mismatched heterostructures applied as buffer layers for the optically active structures. Słowa kluczowe: Dislocations, Anisotropic Hyperelasticity, Residual Stresses Afiliacje autorów:
Dłużewski P. | - | IPPT PAN | Jurczak G. | - | IPPT PAN | Maciejewski G. | - | IPPT PAN | Kret S. | - | Institute of Physics, Polish Academy of Sciences (PL) | Ruterana P. | - | CNRS (FR) | Nouet G. | - | CNRS (FR) |
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