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Dłużewski P., Domagala J.Z.♦, Kret S.♦, Jarosz D.♦, Kryśko M.♦, Teisseyre H.♦, Phase-transition critical thickness of rocksalt MgxZn1−xO layers,
The Journal of Chemical Physics, ISSN: 0021-9606, DOI: 10.1063/5.0042415, Vol.154, pp.154701-1-8, 2021 Abstract:
The rocksalt structure of ZnO has a very promising bandgap for optoelectronic applications. Unfortunately, this high-pressure phase is unstable under ambient conditions. This paper presents experimental results for rocksalt-type ZnO/MgO superlattices and theoretical considerations of the critical thickness of MgxZn1−xO layers. The correlations between the layer/spacer thickness ratio, elastic strain, chemical composition, and critical thickness are analyzed. The Matthews and Blakeslee model is revisited to find analytic conditions for the critical layer thickness resulting in phase transition. Our analysis shows that due to the decrease in misfit stresses below some critical limit, the growth of multiple quantum wells composed of rocksalt ZnO layers and MgO spacers is possible only for very large layer/spacer thickness ratios. Affiliations:
| Dłużewski P. | - | IPPT PAN | | Domagala J.Z. | - | other affiliation | | Kret S. | - | Institute of Physics, Polish Academy of Sciences (PL) | | Jarosz D. | - | Institute of High Pressure Physics, Polish Academy of Sciences (PL) | | Kryśko M. | - | other affiliation | | Teisseyre H. | - | Institute of Physics, Polish Academy of Sciences (PL) |
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Kret S.♦, Dłużewski P., Szczepańska A.♦, Żak M.♦, Czernecki R.♦, Kryśko M.♦, Leszczyński M.♦, Maciejewski G., Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and X-ray diffraction,
NANOTECHNOLOGY, ISSN: 0957-4484, DOI: 10.1088/0957-4484/18/46/465707, Vol.18, No.46, pp.465707-0, 2007Abstract:
We present transmission electron microscopy (TEM) and x-ray quantitative studies of the indium distribution in InxGa1−xN/GaN multiple quantum wells (MQWs) with x = 0.1 and 0.18. The quantum wells were grown by low-pressure metalorganic chemical vapour deposition (LP-MOCVD) on a bulk, dislocation-free, mono-crystalline GaN substrate. By using the quantitative TEM methodology the absolute indium concentration was determined from the 0002 lattice fringe images by the strain measurement coupled with finite element (FE) simulations of surface relaxation of the TEM sample. In the x-ray diffraction (XRD) investigation, a new simulation program was applied to monitor the indium content and lateral composition gradients. We found a very high quality of the multiple quantum wells with lateral indium fluctuations no higher than ΔxL = 0.025. The individual wells have very similar indium concentration and widths over the whole multiple quantum well (MQW) stack. We also show that the formation of 'false clusters' is not a limiting factor in indium distribution measurements. We interpreted the 'false clusters' as small In-rich islands formed on a sample surface during electron-beam exposure. Affiliations:
| Kret S. | - | Institute of Physics, Polish Academy of Sciences (PL) | | Dłużewski P. | - | IPPT PAN | | Szczepańska A. | - | other affiliation | | Żak M. | - | other affiliation | | Czernecki R. | - | other affiliation | | Kryśko M. | - | other affiliation | | Leszczyński M. | - | other affiliation | | Maciejewski G. | - | IPPT PAN |
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