Institute of Fundamental Technological Research
Polish Academy of Sciences

Partners

Gerard Nouet

CNRS (FR)

Recent publications

Dłużewski P., Jurczak G., Maciejewski G., Kret S.^♦, Ruterana P.^♦, Nouet G.^♦, Finite Element Simulation of Residual Stresses in Epitaxial Layers, Materials Science Forum (MSF), ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/MSF.404-407.141, Vol.404-407, pp.141-146, 2002

Abstract:
A nonlinear finite element approach presented here is based on the constitutive equations for anisotropic hyperelatic materials. By digital image processing the elastic incompatibilities (lattice mismatch) are extracted from the HRTEM image of GaN epilayer. Such obtained tensorial field of dislocation distribution is used next as the input data to the FE code. This approach is developed to study the stress distribution associated with lattice defects in highly mismatched heterostructures applied as buffer layers for the optically active structures.

Keywords:
Dislocations, Anisotropic Hyperelasticity, Residual Stresses

Affiliations:

Dłużewski P.	-	IPPT PAN
Jurczak G.	-	IPPT PAN
Maciejewski G.	-	IPPT PAN
Kret S.	-	Institute of Physics, Polish Academy of Sciences (PL)
Ruterana P.	-	CNRS (FR)
Nouet G.	-	CNRS (FR)

Conference papers

Dłużewski P., Belkadi A., Chen J.^♦, Ruterana P.^♦, Nouet G.^♦, FE simulation of InGaN QD formation at the edge of threading dislocation in GaN, IWN 2006, International Workshop on Nitride Semiconductors, 2006-10-22/0-27, Kyoto (JP), DOI: 10.1002/pssc.200674870, Vol.7, pp.2403-2406, 2007

Abstract:
The stress induced diffusion process of In-Ga segregation in InxGa1–xN layer deposited on GaN is simulated step by step by using a 3D nonlinear FE method. From the thermodynamical point of view this process is governed by the driving force induced by the gradient of residual stresses operating in an anisotropic nonlinear elastic structure. The source of stresses we consider is the set of threading dislocations examined in the plane view HRTEM investigation of GaN layer deposited on sapphire.

Affiliations:

Dłużewski P.	-	IPPT PAN
Belkadi A.	-	IPPT PAN
Chen J.	-	Laboratoiré de Recherché sur les Proprietes des Materiaux Nouveaux (FR)
Ruterana P.	-	CNRS (FR)
Nouet G.	-	CNRS (FR)